Supersymmetry and unconventional quantum Hall effect in monolayer, bilayer and trilayer graphene

Unconventional fractional quantum Hall effect in monolayer and bilayer graphene

The commensurability condition is applied to determine the hierarchy of fractional fillings of Landau levels in monolayer and in bilayer graphene. The filling rates for fractional quantum Hall effect (FQHE) in graphene are found in the first three Landau levels in one-to-one agreement with the experimental data. The presence of even denominator filling fractions in the hierarchy for FQHE in bil...

Quantum Hall effect in monolayer-bilayer graphene planar junctions

Jifa Tian,1,2,* Yongjin Jiang,1,3 Isaac Childres,1,2 Helin Cao,1,2 Jiangping Hu,1 and Yong P. Chen1,2,4,† 1Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA 2Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA 3Center for Statistical and Theoretical Condensed Matter Physics, and Department of Physics, Zhejiang Normal University, Jinhua 3...

Integer quantum Hall effect in trilayer graphene.

By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers indu...

Quantum Hall effect in twisted bilayer graphene.

We address the quantum Hall behavior in twisted bilayer graphene transferred from the C face of SiC. The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer. This implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted. In addition, an anomaly appears. The densities at...

Unconventional quantum Hall effect and Berry’s phase of 2 in bilayer graphene